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  2sK3228 silicon n channel mos fet high speed power switching ade-208-765a(z) target specification 2nd. edition december 1998 features low on-resistance r ds(on) =6m w typ. low drive current 4v gate drive device can be driven from 5v source outline to?20ab 1 2 3 1. gate 2. drain(flange) 3. source d g s http://
2sK3228 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 80 v gate to source voltage v gss 20 v drain current i d 75 a drain peak current i d(pulse) * 1 300 a body-drain diode reverse drain current i dr 75 a avalanche current i ap * 3 50 a avalanche energy e ar * 3 181 mj channel dissipation pch* 2 100 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c note: 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 3 50 w
2sK3228 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 80 v i d = 10ma, v gs = 0 gate to source leak current i gss 0.1 m av gs = 20v, v ds = 0 zero gate voltege drain current i dss 1 0 m av ds = 80 v, v gs = 0 gate to source cutoff voltage v gs( off) 1.0 2.5 v i d = 1ma, v ds = 10v* 1 static drain to source on state r ds(on) 6.0 7.5 m w i d = 40a, v gs = 10v* 1 resistance 8.0 12 m w i d = 40a, v gs = 4v* 1 forward transfer admittance |y fs | 5 59 0 s i d = 40a, v ds = 10v* 1 input capacitance ciss 9700 p f v ds = 10v output capacitance coss 1250 p f v gs = 0 reverse transfer capacitance crss 290 p f f = 1mhz total gate charge qg 150 n c v dd = 25v gate to source charge qgs 3 0 nc v gs = 25v gate to drain charge qgd 3 0 nc i d = 75a turn-on delay time t d(on) 8 0 ns v gs = 10v, i d = 40a rise time t r 300 n s r l = 0.75 w turn-off delay time t d(off) 770 n s fall time t f 370 n s body?rain diode forward voltage v df 1.05 v i f = 75a, v gs = 0 body?rain diode reverse recovery time t rr 9 0 ns i f = 75a, v gs = 0 dif/ dt =50a/ m s note: 1. pulse test
2sK3228 4 package dimensions unit: mm 10.16 0.2 9.5 8.0 1.26 0.15 2.7 max 1.5 max 0.76 0.1 2.54 0.5 1.27 18.5 0.5 7.8 0.5 f 3.6 + 0.1 ?0.08 hitachi code eiaj jedec to?20ab sc?6 1.27 0.1 1.2 0.1 15.0 0.3 6.4 + 0.2 ?0.1 2.79 0.2 0.5 0.1 14.0 0.5 2.54 0.5 4.44 0.2
cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 1999. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher strae 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to:


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